To reinforce the position of Europe’s semiconductor and electronics industry to face global competition, eleven institutes within the Fraunhofer Group for Microelectronics havejoined forces with the Leibniz Institute for Innovations for High Performance Microelectronics (IHP) and the Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH). On April 6, they together kicked off a cross-location research factory for micro- and nanoelectronics.
The concept for the research fab wasdeveloped jointly by Fraunhofer and Leibniz in order to combine their skills in a common technology pool. For the modernization and extension of their infrastructure the 13 research facilities are funded with ca. 350 million euros by the German Federal Ministry of Education and Research.
The focus of the cross-institute work will lie on four future-relevant areas of technology. Having a knowledge edge in these areas is one of the basic prerequisites for important areas of application and will provide Germany and Europe with the necessary clout among international competition:
The research fab is organized in four technology parks in order to facilitate prompt and efficient promotion of the key technological topics:
- Technology Park 1: The latest "Silicon-based Technologies" for sensor technology, actuation systems, and information processing technology
- Technology Park 2: "Compound Semiconductors" with modern materials for power-saving and communications technology
- Technology Park 3: "Heterointegration" – the latest combinations of silicon and other semiconductors; for example for the Internet of Things
- Technology Park 4: "Design, Test and Reliability" for design and design methods, quality, and security