Labs for Test and Analysis of Electronic Components and Systems

Humidity-heat chamber

• Climate testing: Humidity-heat cycling up to +95°C and 98% r.H

2 climate chamber 

• Climate testing: Rapid temperature changes up to -80°C and 220°C

Alternating climate chamber

• Climate testing: Temperature cycling -80°C to 200°C and up to 10k/min

Precision Temperature Forcing System

• Rapid temperature fluctuations and temperature cycling

Constant climate chamber

• Temperature storage up to 300°C

High-current laboratory power supply

• Active thermal stress tests up to 1000 A

Electrodynamic vibration system

• Sinusoidal, random up to 2.93 kN vector force and 4000 Hz
• Shock testing up to 5.9 kN
• Three-axis mounting device

Tensile/compressive material testing machine

• Tensile and compression tests with different load cells
• Combined tests with climate chamber
• Precision measurement and video capture

Cross-section analysis

• High-precision, chemical-mechanical polishing and grinding machines
• Fluorescence embedding material

Stereo and transmitted light microscopes with image analysis

• Various microscope objectives (magnification up to 1500x)
• Various contrast and illumination options (BF, DF, PO, DIC, fluorescence)

Confocal microscopy & profilometry (optical, tactile)

• Profile, topography, thickness (TTV), and roughness measurements with high lateral and vertical resolution

Atomic force microscopy (AFM)

• Various measurement modes with nm-scale spatial resolution Topography & Roughness
• Various measurement modes with nm-scale spatial resolution Electrical & Magnetic Characterization (e.g. SCM)

High-resolution scanning electron microscopes SEM with EDX analysis

• Detectors: SE2, BSE, InLens
• Variable chamber pressure
• EDX for element analysis with mapping and line profiles

IR photon emission microscopy & thermography

• EMMI (Emission microscopy) & OBIRCH (Optical Beam Induced Resistance Change)
• Localization of defects for failure analysis

X-ray inspection system with high-performance µCT scanning

• 2D, CT, and laminography scans
• Resolution up to 500 nm
• 25 - 160 kV range
• 16-bit flat detector with 65,536 gray levels

Reflectometry & ellipsometry

• Layer thickness analysis of semi-transparent layers down to 10 nm

FTIR spectroscopy

• Breakdown of chemical composition

MD-PICTS

• Defect characterization in semiconductors as small, isolated pieces

Source meter, teraohm, and picoamperemeter

• High-resolution DC voltage and current sources
• High resolution and sampling rates

Contaminometer

• Measurement of ionic contaminants on PCBs and assemblies

Dip solder bath with SPS control

• Solderability testing of PCBs

Bond pull and bond ball/die shear tests

• Bond pull and ball shear tests on bonds with a thickness of 20 µm or more

High-precision 5-axis CNC milling machine with integrated layer thickness sensor

• Mechanical preparation of PCBs
• Thinning of IC chips down to single-digit µm range
• Processing individual chips on PCBs while maintaining electrical functionality

Chemical-mechanical polishing and grinding system (CMP)

• Precise, abrasive material removal using different-sized films and suspensions
• Removal of IC layers (IMD and metal layers) for cross-sectional analysis
• Selective removal using slurries

Infrared (IR) laser system

• Laser marking of chips
• Laser processing of chips
• Batch laser marking of trays
• Decapsulation of chips
• Laser spot size of 50µm

Ion beam etching system "IntlVac Nanoquest I"

• Homogeneous and high-precision processing and removal of individual IC layers
• For metals, polymers, oxides, nitrides, and other typical semiconductor materials
• Various process gases for Purely physical removal (IBE)
• Various process gases for Selective chemical removal (RIBE/CAIBE)

• High homogeneity over a large area through a stable 80 mm diameter ion beam
• In-situ process monitoring using SIMS (Secondary Ion Mass Spectrometry)

ICP-RIE plasma etching system

• Precise, selective etching of IC layers
• For polymers, oxides, nitrides, silicon, and other typical semiconductor materials
• With endpoint detection

Scanning electron microscope for chip scanning, "Raith 150 Two" type

• High-resolution imaging processes (resolution < 2nm/pixel)
• Very high system stability allows for very long scans over multiple days
• Conversion of individual images into stitched GDSII layout format

Dual-Beam Focused Ion Beam/Scanning Electron Microscope system, "Raith Velion" type, for precise processing and modification of ICs

• Si beam resolution: up to 6nm/pixel, with Au beam: up to 12nm/pixel
• FIB cross-sections through chips
• Circuit editing
• Integrated EDX for elemental analysis
• FIB sources: Si, Au
• Working gases: Pt, XeF2
• SEM for in-situ process control
• Nanomanipulators for EBIC/EBAC measurements

High-resolution scanning electron microscope, Zeiss Gemini 560 type, for analysis and process control

• Resolution of 1nm/pixel
• "Low kV" mode
• Variable chamber pressure
• EDX for elemental analysis
• Detectors: SE2, BSE, InLens, InLens-BSE, STEM
• ATLAS system for chip scanning
• Nanomanipulators for EBIC/EBAC measurements
• E-beam probing

Additional equipment for processing and process control

• High-resolution digital microscope (magnification up to 1000x, further digital zoom possible)
• High-resolution IR digital microscope (magnification up to 1000x)
• High-resolution confocal microscopes
• High-resolution profilometers (optical & tactile)
• Atomic force microscope (AFM) with various measurement modes (including SCM)
• UV-VIS reflectometer & ellipsometer
• Ion polishing system
• MW plasma ashing & decapsulation
• Wet chemical selective preparation of various materials

Additional equipment for chip analysis

• Semiconductor parameter analyzers
• 62 GHz real-time oscilloscope
• Generation and measurement of picosecond and nanosecond high-current pulses for fault localization

• Q-factor measurements of superconducting resonators down to the single-photon limit
• Various qubit characterization measurements (one-tone spectroscopy/power sweep, two-tone spectroscopy, T1, T2*, T2)
• RF measurements up to 18 GHz (e.g., resonators)
• DC measurements (e.g., resistance, critical current, transistor characteristics)
• Measurements on the 4K stage (e.g., for cryoelectronics)
• Measurements as a function of temperature

Transmission Line Pulser TLP

• High-current characterization of individual components and circuits
• Pulse durations from 1 ns to 1.6 µs (pulse durations < 1ns available upon request)
• Maximum pulse current of 80 A (into a short circuit)
• Measurement bandwidth up to 67 GHz

Human Body Model HBM Tester (component-level testing)

• Device Level HBM according to ANSI/ESDA/JEDEC JS-001-2023
• 2-pin testing system (minimal parasitic elements)
• Maximum test voltage of 10 kV
• Package and wafer/bare die testing
• Measurement of all stress pulses
• Leakage current measurement for failure detection

Human Body Model HBM Tester (system-level testing)

• ESD Gun System Level HBM according to 
• Maximum test voltage of 30 kV
• Measurement of discharge current

Charged Device Model CDM Tester

• CCDM testing according to ANSI/ESDA/JEDEC JS-002-2024 
• High-precision positioning of discharge pin within ±1 µm range
• Maximum test voltage of 3 kV
• Measurement of all discharge currents

Capacitively Coupled Transmission Line Pulsing CC-TLP

• CC-TLP testing according to ANSI/ESD SP5.3.4-2022
• More precise ESD stress as an alternative to CDM
• Package and wafer/bare die testing
• Measurement bandwidth up to 67 GHz

Robustness test bench (EMC scanner)

• 4-axis positioning system
• Positioning accuracy of ±20 µm
• Measurement and coupling of interference fields in PCBs and ICs
• Spectrum analysis up to 26 GHz
• Local temperature control in the range of -70°C to +200°C

Additional equipment

• Semi-automatic wafer prober with thermochuck for wafers up to 300mm in diameter
• Semiconductor parameter analyzers
• Network analyzers up to 110 GHz and Agilent ADS simulator
• 62 GHz real-time oscilloscope
• Generation and measurement of picosecond and nanosecond high-current pulses for fault localization