The scientists at the Fraunhofer EMFT develop novel, extremely low-noise JFET transistors and customize them to meet the specific requirements of the potential customers.
For example in the x-ray spectroscopy, the performance of the detector module is mostly dependent on the quality of the first amplifier level, in addition to the sensor component. The low-noise JFET transistors developed at the Fraunhofer EMFT allow for extremely low-noise amplifiers. Therefore they offer great optimization potential e.g. for material analysis, recycling or security applications.