Labs for Test and Analysis of Electronic Components and Systems

2-pin test system in the Fraunhofer EMFT test lab for electronic components and systems
© Fraunhofer EMFT / Bernd Müller
2-pin test system in the Fraunhofer EMFT test lab for electronic components and systems

Climate and reliability laboratories

Humidity-heat chamber

  • Climate testing: Humidity-heat cycling up to +95°C and 98% r.H

2 climate chamber 

  • Climate testing: Rapid temperature changes up to -80°C and 220°C

Alternating climate chamber

  • Climate testing: Temperature cycling -80°C to 200°C and up to 10k/min

Precision Temperature Forcing System

  • Rapid temperature fluctuations and temperature cycling

Constant climate chamber

  • Temperature storage up to 300°C

High-current laboratory power supply

  • Active thermal stress tests up to 1000 A

Electrodynamic vibration system

  • Sinusoidal, random up to 2.93 kN vector force and 4000 Hz
  • Shock testing up to 5.9 kN
  • Three-axis mounting device

Tensile/compressive material testing machine

  • Tensile and compression tests with different load cells
  • Combined tests with climate chamber
  • Precision measurement and video capture

Failure and material analysis

Cross-section analysis


  • High-precision, chemical-mechanical polishing and grinding machines
  • Fluorescence embedding material

Stereo and transmitted light microscopes with image analysis

  • Various microscope objectives (magnification up to 1500x)
  • Various contrast and illumination options (BF, DF, PO, DIC, fluorescence)

Confocal microscopy & profilometry (optical, tactile)

  • Profile, topography, thickness (TTV), and roughness measurements with high lateral and vertical resolution

Atomic force microscopy (AFM)

  • Various measurement modes with nm-scale spatial resolution Topography & Roughness
  • Various measurement modes with nm-scale spatial resolution Electrical & Magnetic Characterization (e.g. SCM)

High-resolution scanning electron microscopes SEM with EDX analysis

  • Detectors: SE2, BSE, InLens
  • Variable chamber pressure
  • EDX for element analysis with mapping and line profiles

IR photon emission microscopy & thermography

  • EMMI (Emission microscopy) & OBIRCH (Optical Beam Induced Resistance Change)
  • Localization of defects for failure analysis

X-ray inspection system with high-performance µCT scanning

  • 2D, CT, and laminography scans
  • Resolution up to 500 nm
  • 25 - 160 kV range
  • 16-bit flat detector with 65,536 gray levels

Reflectometry & ellipsometry

  • Layer thickness analysis of semi-transparent layers down to 10 nm

FTIR spectroscopy

  • Breakdown of chemical composition


  • Defect characterization in semiconductors as small, isolated pieces

Source meter, teraohm, and picoamperemeter

  • High-resolution DC voltage and current sources
  • High resolution and sampling rates


  • Measurement of ionic contaminants on PCBs and assemblies

Dip solder bath with SPS control

  • Solderability testing of PCBs

Bond pull and bond ball/die shear tests

  • Bond pull and ball shear tests on bonds with a thickness of 20 µm or more

Integrated Circuits

Chip and wafer preparation

High-precision 5-axis CNC milling machine with integrated layer thickness sensor

  • Mechanical preparation of PCBs
  • Thinning of IC chips down to single-digit µm range
  • Processing individual chips on PCBs while maintaining electrical functionality

Chemical-mechanical polishing and grinding system (CMP)

  • Precise, abrasive material removal using different-sized films and suspensions
  • Removal of IC layers (IMD and metal layers) for cross-sectional analysis
  • Selective removal using slurries

Infrared (IR) laser system

  • Laser marking of chips
  • Laser processing of chips
  • Batch laser marking of trays
  • Decapsulation of chips
  • Laser spot size of 50µm

Ion beam etching system "IntlVac Nanoquest I"

  • Homogeneous and high-precision processing and removal of individual IC layers
  • For metals, polymers, oxides, nitrides, and other typical semiconductor materials
  • Various process gases for Purely physical removal (IBE)
  • Various process gases for Selective chemical removal (RIBE/CAIBE)
  • High homogeneity over a large area through a stable 80 mm diameter ion beam
  • In-situ process monitoring using SIMS (Secondary Ion Mass Spectrometry)

ICP-RIE plasma etching system

  • Precise, selective etching of IC layers
  • For polymers, oxides, nitrides, silicon, and other typical semiconductor materials
  • With endpoint detection

Scanning electron microscope for chip scanning, "Raith 150 Two" type

  • High-resolution imaging processes (resolution < 2nm/pixel)
  • Very high system stability allows for very long scans over multiple days
  • Conversion of individual images into stitched GDSII layout format

Dual-Beam Focused Ion Beam/Scanning Electron Microscope system, "Raith Velion" type, for precise processing and modification of ICs

  • Si beam resolution: up to 6nm/pixel, with Au beam: up to 12nm/pixel
  • FIB cross-sections through chips
  • Circuit editing
  • Integrated EDX for elemental analysis
  • FIB sources: Si, Au
  • Working gases: Pt, XeF2
  • SEM for in-situ process control
  • Nanomanipulators for EBIC/EBAC measurements

High-resolution scanning electron microscope, Zeiss Gemini 560 type, for analysis and process control

  • Resolution of 1nm/pixel
  • "Low kV" mode
  • Variable chamber pressure
  • EDX for elemental analysis
  • Detectors: SE2, BSE, InLens, InLens-BSE, STEM
  • ATLAS system for chip scanning
  • Nanomanipulators for EBIC/EBAC measurements
  • E-beam probing

Additional equipment for processing and process control

  • High-resolution digital microscope (magnification up to 1000x, further digital zoom possible)
  • High-resolution IR digital microscope (magnification up to 1000x)
  • High-resolution confocal microscopes
  • High-resolution profilometers (optical & tactile)
  • Atomic force microscope (AFM) with various measurement modes (including SCM)
  • UV-VIS reflectometer & ellipsometer
  • Ion polishing system
  • MW plasma ashing & decapsulation
  • Wet chemical selective preparation of various materials

Additional equipment for chip analysis

  • Semiconductor parameter analyzers
  • 62 GHz real-time oscilloscope
  • Generation and measurement of picosecond and nanosecond high-current pulses for fault localization

Low-temperature measurements / cryogenics

Cryostat (temperature <10 mK)
  • Q-factor measurements of superconducting resonators down to the single-photon limit
  • Various qubit characterization measurements (one-tone spectroscopy/power sweep, two-tone spectroscopy, T1, T2*, T2)
  • RF measurements up to 18 GHz (e.g., resonators)
  • DC measurements (e.g., resistance, critical current, transistor characteristics)
  • Measurements on the 4K stage (e.g., for cryoelectronics)
  • Measurements as a function of temperature

Electro-static discharge (ESD), electrical overstress (EOS), and electromagnetic compatibility (EMC)

Transmission Line Pulser TLP

  • High-current characterization of individual components and circuits
  • Pulse durations from 1 ns to 1.6 µs (pulse durations < 1ns available upon request)
  • Maximum pulse current of 80 A (into a short circuit)
  • Measurement bandwidth up to 67 GHz

Human Body Model HBM Tester (component-level testing)

  • Device Level HBM according to ANSI/ESDA/JEDEC JS-001-2023
  • 2-pin testing system (minimal parasitic elements)
  • Maximum test voltage of 10 kV
  • Package and wafer/bare die testing
  • Measurement of all stress pulses
  • Leakage current measurement for failure detection

Human Body Model HBM Tester (system-level testing)


  • ESD Gun System Level HBM according to 
  • Maximum test voltage of 30 kV
  • Measurement of discharge current

Charged Device Model CDM Tester

  • CCDM testing according to ANSI/ESDA/JEDEC JS-002-2024 
  • High-precision positioning of discharge pin within ±1 µm range
  • Maximum test voltage of 3 kV
  • Measurement of all discharge currents

Capacitively Coupled Transmission Line Pulsing CC-TLP

  • CC-TLP testing according to ANSI/ESD SP5.3.4-2022
  • More precise ESD stress as an alternative to CDM
  • Package and wafer/bare die testing
  • Measurement bandwidth up to 67 GHz

Robustness test bench (EMC scanner)

  • 4-axis positioning system
  • Positioning accuracy of ±20 µm
  • Measurement and coupling of interference fields in PCBs and ICs
  • Spectrum analysis up to 26 GHz
  • Local temperature control in the range of -70°C to +200°C

Additional equipment

  • Semi-automatic wafer prober with thermochuck for wafers up to 300mm in diameter
  • Semiconductor parameter analyzers
  • Network analyzers up to 110 GHz and Agilent ADS simulator
  • 62 GHz real-time oscilloscope
  • Generation and measurement of picosecond and nanosecond high-current pulses for fault localization

These technologies in labs for test an analysis of electronic components and systems are available at Fraunhofer EMFT for your application topics. We look forward to hearing from you!

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Competence Field: Electrostatic Discharge - ESD


Competence Field: Analysis and Test of Electronical Components and Systems


Service Offering: Failure Analysis of Electronic Components and Systems