Low-noise JFET

The scientists at the Fraunhofer EMFT develop novel, extremely low-noise JFET transistors and customize them to meet the specific requirements of the potential customers. For example in the x-ray spectroscopy, the performance of the detector module is mostly dependent on the quality of the first amplifier level, in addition to the sensor component. The low-noise JFET transistors developed at the Fraunhofer EMFT allow for extremely low-noise amplifiers. Therefore they offer great optimization potential e.g. for material analysis, recycling or security applications. 

The advantage of the extremely low-noise JFET is that it achieves a cut-off frequency of 1Ghz - making it the “fastest” silicon-based JFET transistor to date compared to commercial offerings. It has extremely low noise at a very low input capacitance. This benefits sensitive sensor applications such as X-ray fluorescence spectroscopy - EDX, time-of-flight measurements or ion detectors. Thanks to the integrated feedback capacitance and the reset diodes, the EMFT-JFET can be placed directly on the sensor and parasitic effects can be minimized.

By further optimization in robustness, cutoff frequency and noise, even shorter measurement times can be achieved. 

Chips with or without housing are available als samples, the size of 0,5 x 0,5 mm. The standard interfaces include integrated feedback capacity and a reset mechanism, for deployment in charging amplifiers.

Fields of application

In sensor technology, the low input capacitance ensures improved sensitivity and response speed, which benefits measurement tasks, e.g. in environmental monitoring, distance measurement and analytics.

In applications such as time-of-flight measurements, we were able to show that the Fraunhofer EMFT JFET is superior to existing systems in terms of signal-to-noise ratio. This was achieved by the low input capacitance combined with low noise of only 1.6nV/sqrt(Hz). As a result, previously unattainable accuracies and ranges could be achieved.

In the field of ultrasound technology, the Fraunhofer EMFT JFET can provide an improved signal-to-noise ratio. This opens up the possibility of generating more precise ultrasound images, which are of great importance in medical diagnostics and industrial testing, for example. 

In an x-ray fluorescence spectroscopy application, the EMFT-JFET was able to record significantly more precise energy spectra than with standard components. 

Leverage our expert low-noise JFET at Fraunhofer EMFT for your specific application needs. We are eager to collaborate and innovate with you - contact us!