Low-noise JFET

The scientists at the Fraunhofer EMFT develop novel, extremely low-noise JFET transistors and customize them to meet the specific requirements of the potential customers.

For example in the x-ray spectroscopy, the performance of the detector module is mostly dependent on the quality of the first amplifier level, in addition to the sensor component. The low-noise JFET transistors developed at the Fraunhofer EMFT allow for extremely low-noise amplifiers. Therefore they offer great optimization potential e.g. for material analysis, recycling or security applications. 

Low-noise JFET transistors
© Fraunhofer EMFT / Bernd Müller
Low-noise JFET transistors

The advantage of the extremely low-noise JFET is that it reaches the cutoff frequency of 1GHz, making it the "fastest" silicon-based JFET transistor compared to the commercially available products. For example in x-ray fluorescence applications, the low-noise JFET of Fraunhofer EMFT is able to measure the same spectral resolution in half the time compared to the transistors available on the market. Additionally, the low-noise JFET operate in room temperature without cooling. This simplifies the construction of the sensor and reduces the cost and energy consumption.

By further optimization in robustness, cutoff frequency and noise, even shorter measurement times can be achieved. In perspective, deployment in high frequency oscillators and mixers could be possible. 

Chips with or without housing are available als samples, the size of 0,5 x 0,5 mm. The standard interfaces include integrated feedback capacity and a reset mechanism, for deployment in charging amplifiers.

These semiconductor components are available at Fraunhofer EMFT for your application topics. We look forward to hearing from you!

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