Fraunhofer Institute for Electronic Microsystems and Solid State Technologies EMFTMove2THz is an EU-funded research initiative to develop indium phosphide-on-silicon (InP-on-Si) technology for energy-efficient high-frequency solutions. From 2024 to 2027, 27 partners from eight countries will work on a scalable, CMOS-compatible platform for 6G mobile communications, radar sensor technology, imaging, and photonics, thereby strengthening Europe's technological sovereignty in the sub-THz range. Fraunhofer EMFT is developing key components for 240 GHz radar modules, including power and low-noise amplifiers, thereby contributing to the future integration of complete front-end modules.
High-frequency technology of tomorrow, developed in Europe
Move2THz – EU initiative for energy-efficient sub-THz semiconductor technologies
Dr. Lauritano is working on electromagnetic simulations for the Move2Thz project
Move2THz project
Motivation and Objectives
Move2THz is a research initiative funded by the European Union under Horizon Europe and the Chips Joint Undertaking (Chips JU). From June 2024 to May 2027, 27 partners from industry and research in eight European countries, coordinated by Soitec SA (France), will develop an indium phosphide-on-silicon (InP-on-Si) technology. Participants from Germany include Fraunhofer EMFT, Fraunhofer IZM, the Ferdinand-Braun-Institut, Aixtron, the University of Duisburg-Essen, Microwave Photonics GmbH, AdMOS GmbH, and Freiberg Compound Materials GmbH. Other partners come from Belgium, Switzerland, Sweden, the Netherlands, and Lithuania.
The aim of the project is to establish a continuous European value chain for energy-efficient high-frequency technologies in the sub-THz range. The innovative InP-on-Si platform will enable cost-efficient series production of high-performance components that open up new applications in communication, radar sensor technology, high-resolution imaging, and photonics.
Simplified circuit diagram of the 240 GHz LNA in ETHZ InP-DHBT technology
Layout of the 240 GHz LNA in ETHZ InP-DHBT technology
Smith diagram with noise figure (NF) and optimal impedances ZS,opt and ZL,opt for the 240 GHz cascode LNA
Technology and European Impact
Move2THz integrates indium phosphide with cost-efficient silicon processes on large-format 300 mm wafers. The result is a CMOS-compatible platform that significantly lowers the barriers to sub-THz technologies. This key technology strengthens Europe's sovereignty in the field of high-frequency semiconductors and lays the foundation for energy-efficient 6G systems as well as future digital infrastructures and industrial applications.
Fraunhofer EMFT's contribution
Fraunhofer EMFT is working with Fraunhofer IZM and ETH Zurich to develop sub-THz radar sensors based on InP technology. The process developed by ETH Zurich achieves transition frequency (ft) and maximum oscillation frequency (fmax) of 450 GHz and 850 GHz, respectively.
In the project, Fraunhofer EMFT is developing high-performance components for a 240 GHz front-end module (FEM) for an FMCW radar system, including power amplifiers (PA) and low-noise amplifiers (LNA). Voltage-controlled oscillators (VCO) and mixers will follow in the future, leading to a fully integrated FEM. At the same time, Fraunhofer IZM is developing suitable packaging and antenna designs that are optimally matched to the Fraunhofer EMFT circuits.