Processing of Thin Silicon Substrates at Fraunhofer EMFT

Bending test for thin silicon
© Fraunhofer EMFT / Bernd Müller
Bending test for thin silicon

Processing of thin Silicon Substrates

For Manufacturing of extreme thin wafers wth thickness of 10 µm to ca. 100 µm, reversible carrier technologies (temporary bonding) are used.

Wafer grinding DISCO DFG 8540 for wafers with diameter of 200 mm and 150 mm.
Wet-chemical spin-etching  SEZ SP 203 for wafers with diameter of 200 mm and 150 mm.
Chemo-mechanical polishing (CMP) Avanti 472 for wafers with diameter of 200 mm and 150 mm.

Mechanical and electrical testing of thin silicon materials and foil electronic modules

Bending and breaking test 3-point bending, ring-ball test 
Electrical characterization during iterative bending   
Iterative bending at defined bending radius   

These technologies for processing thin silicon substrates are available at Fraunhofer EMFT for your application topics. We look forward to hearing from you!

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Competence Field: Thin Silicon


Service Offering: Roll-to-Rolle Fabrication of Flexible Substrates