Fraunhofer Institute for Electronic Microsystems and Solid State Technologies EMFT
Bending test for thin silicon
Processing of Thin Silicon Substrates at Fraunhofer EMFT
Processing of thin Silicon Substrates
For Manufacturing of extreme thin wafers wth thickness of 10 µm to ca. 100 µm, reversible carrier technologies (temporary bonding) are used.
| Wafer grinding | DISCO DFG 8540 for wafers with diameter of 200 mm and 150 mm. |
| Wet-chemical spin-etching | SEZ SP 203 for wafers with diameter of 200 mm and 150 mm. |
| Chemo-mechanical polishing (CMP) | Avanti 472 for wafers with diameter of 200 mm and 150 mm. |
Mechanical and electrical testing of thin silicon materials and foil electronic modules
| Bending and breaking test | 3-point bending, ring-ball test |
| Electrical characterization during iterative bending | |
| Iterative bending at defined bending radius |
